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Accession Number:
AD0831251
Title:
ELECTRON INJECTION LASER.
Corporate Author:
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
Report Date:
1968-03-01
Abstract:
Lasing has been attained at 77K in Ga sub 1-x Al sub x As diodes at photon energies between 1.51 and 1.65 eV. Laser operation at room temperature has not yet been attained, probably because the doping levels are still too low. The wavelength of light emitted by solution-grown diodes has been used to monitor the solution growth process. Vapor growth of GaAs with substantially increased water vapor pressure gave higher growth rates, but no significant change in quality of the grown layers. Because of the significant effect of epoxy potting on laser performance, the thermal expansion coefficients of several epoxies have been measured. The potted units appear to be under a pressure of several thousand atmospheres, but at present we cannot separate the hydrostatic and uniaxial components. Data on degradation of potted and unpotted lasers at 77K and 300K are reported. A program for calculating the electron and hole motion in a graded junction has been written, to obtain a more accurate electrical model for the injection laser. The ion implantation apparatus has been placed in operation, and electroluminescence has been found in N-implanted SiC after heat treatment. Author
Descriptive Note:
Semi-annual rept. no. 3, 1 Jul-31 Dec 67,
Pages:
0032
Contract Number:
DA-28-043-AMC-02510(E)
File Size:
0.00MB
