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Accession Number:
AD0809148
Title:
SEMICONDUCTOR LASER MODULATION TECHNIQUES.
Corporate Author:
GENERAL ELECTRIC CO SYRACUSE NY
Report Date:
1967-02-01
Abstract:
This report describes continuing work on construction of a piezoelectric modulatorgallium-arsenide laser diode package aimed at frequency modulation of a continuously operating laser. Difficulties encountered with repolarization of PZT transducer material after fabrication have led to 1 consideration of a lower temperature fabrication procedure and 2 investigation of high-Curie-temperature piezoelectric materials such as lithium metaniobate. Author
Descriptive Note:
Quarterly progress technical rept. no. 2, 31 Jul-31 Oct 66.
Pages:
0004
Contract Number:
AF 30(602)-4199
File Size:
0.00MB