Accession Number:

AD0773647

Title:

Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy

Personal Author(s):

Corporate Author:

JOHNS HOPKINS UNIV LAUREL MD APPLIED PHYSICS LAB

Report Date:

1973-11-30

Abstract:

Comparison of the 125Te Mossbauer spectra in amorphous and crystalline Te films indicates that in the amorphous phase the quadrupole splitting is about 20 greater and the recoil-free fraction about one-third as great as in the crystalline phase. The increase in quadrupole splitting is interpreted as indicating a decrease of about 3 in the length of the covalent bond between the nearest neighbor Te atoms in the amorphous state. The decrease in recoil-free fraction in the amorphous film is explained as due to dangling bonds at the ends of the Te chains which are responsible for a change in the density of phonon states in the system. A short paper covering this work has been prepared and is included as an Appendix to this report.

Descriptive Note:

Semiannual technical rept. no. 3

Supplementary Note:

See also report dated 31 May 1973, AD763408.

Pages:

0016

Subject Categories:

Communities Of Interest:

Modernization Areas:

Distribution Statement:

Approved for public release; distribution is unlimited.

Contract Number:

N00017-72-C-4401

Contract Number 2:

ARPA ORDER-1562

File Size:

0.85MB