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Accession Number:
AD0773425
Title:
Chemical Vapor Deposition of Titanium Dioxide Film in Microelectronics,
Corporate Author:
MARYLAND UNIV COLLEGE PARK DEPT OF ELECTRICAL ENGINEERING
Report Date:
1972-10-01
Abstract:
With high dielectric constant, titanium dioxide has been used for making a capacitor and field effect transistor in conjunction with silicon dioxide. High transconductance and low threshold voltage were observed.
Pages:
0005
Contract Number:
DAHC15-68-C-0211
Contract Number 2:
NSF-GH-33577
File Size:
0.00MB
