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Accession Number:
AD0773272
Title:
Investigation of Transient Processes in Transistors during the Pulsed Action of Penetrating Radiation,
Corporate Author:
FOREIGN TECHNOLOGY DIV WRIGHT-PATTERSON AFB OHIO
Report Date:
1973-12-18
Abstract:
Irradiation of the transistors was performed directly in the beam of the accelerated electrons by single pulses of a 2.5 microsecond duration. The ionization current of the collector-base junction, caused by the pulsed action of the radiation, was measured as a function of the dose rate.
Supplementary Note:
Edited trans. of Radiatsionnaya Fizika Nemetallicheskikh Kristallov. Sbornik Statei (USSR) v3 n2 p208-213 1971, by Frank C. Vaughn.
Pages:
0010
File Size:
0.00MB
