Irradiation of the transistors was performed directly in the beam of the accelerated electrons by single pulses of a 2.5 microsecond duration. The ionization current of the collector-base junction, caused by the pulsed action of the radiation, was measured as a function of the dose rate.
Edited trans. of Radiatsionnaya Fizika Nemetallicheskikh Kristallov. Sbornik Statei (USSR) v3 n2 p208-213 1971, by Frank C. Vaughn.