Accession Number:

AD0753916

Title:

High Resolution Detection of Trapped Electron Charges in SiO2 by Scanning Electron Microscopy.

Personal Author(s):

Corporate Author:

ARMY ELECTRONICS COMMAND FORT MONMOUTH N J

Report Date:

1972-10-01

Abstract:

NICS COMMAND FORT MONMOUTH N JHigh Resolution Detection of Trapped Electron Charges in SiO2 by Scanning Electron Microscopy.Research and development technical rept.,Ahlstrom,E. R. Wheeler,W. S. Cook,C. F. ECOM-4036DA-1-B-662703-A-4401-B-662703-A-44003silicon dioxide, space charge, electrons, electron irradiation, ultraviolet radiation, electron microscopy, dielectric filmselectron microscopy, electronic scannersA novel method for detection of trapped charges in silicon dioxide SiO2 is described. Traps that exist in the oxide are first charge by low energy electron bombardment. Then, illumination will ultraviolet UV light through a mask produces a latent image in the oxide. Subsequent exposure to a scanning electron microscope SEM reads out the image. The image sharpness is related to trap density. Author

Descriptive Note:

Research and development technical rept.,

Pages:

0012

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File Size:

0.00MB

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