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Accession Number:
AD0753272
Title:
Structural Properties of Amorphous Semiconductors by Mossbauer Spectroscopy
Corporate Author:
JOHNS HOPKINS UNIV LAUREL MD APPLIED PHYSICS LAB
Report Date:
1972-11-30
Abstract:
The Mossbauer technique provides a means for investigating short- range order and order-disorder transitions which are difficult to examine by other techniques. By correlating structural information with sample preparation variables and optical and electronic properties, a significant contribution to understanding the behavior and properties of amorphous semiconductors may be made. Current emphasis is being placed on observing the amorphous to crystalline transition in vacuum deposited Te films. Since crystallization occurs below room temperature approximately OC, apparatus was constructed to deposit, transfer and examine films maintained at low temperature. crystalline films of tellurium up to 18 microns thick have been deposited on room temperature beryllium substrates and Mossbauer spectra have been obtained.
Descriptive Note:
Semi-Annual technical rept. no. 1
Supplementary Note:
Sponsored in part by DARPA and Department of the Navy Contract N00017-72-C-4401. DOI: 10.21236/AD0753272
Pages:
0010
Distribution Statement:
Approved for public release; distribution is unlimited.
Contract Number:
ARO(D)-5-52
Contract Number 2:
ARPA ORDER-1562
File Size:
0.24MB
