NEW SOUTH WALES UNIV KENSINGTON (AUSTRALIA) SCHOOL OF PHYSICS
The authors describe new experimental arrangements for extending EPR measurements on single crystal cleavage surfaces in uhv down to low temperatures, for GaAs studies. This development is necessary to gain the extra sensitivity which is essential when dealing with the very low signals obtained from relatively low area single crystals. In addition, EPR measurements of other diamond structure semiconductor surfaces have been made. These include the clean and oxygen covered surfaces of Ge, CdS, CdSe, ZnSe, PbS, PbTe, and a full range of Ge - Si alloys, studied by crushing in ultra high vacuum.