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Accession Number:
AD0743207
Title:
Transistor Nonlinear Damage.
Corporate Author:
BOEING CO SEATTLE WASH AEROSPACE GROUP
Report Date:
1972-05-15
Abstract:
The report summarizes the study of radiation induced surface degradation of 1 discrete planar transistors and 2 of devices in a silicon hybrid array bipolar transistors, MOSFETS, MOS capacitors. The study of planar transistors, resulted in determining 1 the relative role of the charge accumulation and of the interface states in the surface degradation, 2 that no differences exist between the type of surface effects caused by proton and gamma irradiation and 3 the possibility of channeling a new mode of failure of the NPN transistor gain at very high doses. These effects were correlated with the studies of effects in hybrid array devices. Surface conditions as a function of dose were monitored primarily by gate controlled measurements on the bipolar transistors. Author
Descriptive Note:
Final rept. Aug 71-Mar 72,
Pages:
0168
Contract Number:
N00014-72-C-0026
File Size:
0.00MB
