DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
AD0701062
Title:
P-MOS ARRAY OF OPTICALLY CONTROLLED DIGITAL CIRCUITS.
Corporate Author:
RCA LABS PRINCETON N J
Report Date:
1969-12-01
Abstract:
A p-MOS array was developed which included four photosensor-amplifier circuits each having a different size photodiode, an optically controlled flip-flop, and an optically loadable memory cell. The photodiodes in the p-MOS arrays had a quantum efficiency of about unity for visible and near-infrared illumination, and a dark current density of less than 20 nAsq cm. The minimum optical energy necessary for a reliable detection by the proposed p-MOS photosensors can be expressed in terms of the photocurrent charge as 2 x 10 to the -14th power coulombs per square mil of the photodiode area. For an optical signal with a wavelength of about 6000 A this corresponds to a flux energy of about 10 nJsq cm incident on the photodiodes. These results demonstrate that arrays of optically controlled p-MOS digital circuits having predictable operating characteristics can be fabricated by a standard p-MOS process. These tests also showed that excellent quality photodiodes can be made without any additional steps in the p-MOS process, and that the yield of the p-MOS arrays is not affected by the presence of the photodiodes. Author
Descriptive Note:
Scientific rept. no. 1, 1 Nov 68-31 Oct 69,
Pages:
0049
Contract Number:
F19628-69-C-0128
File Size:
0.00MB
