EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY
The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator. Author
Trans. of Yogyo Kyokaishi (Japan) v76 n8 p268-276 1968.