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Accession Number:
AD0701010
Title:
EFFECT OF GROWTH RATE ON THE STRUCTURE AND STACKING DISORDER OF SiC CRYSTAL GROWN BY THE LELY METHOD,
Corporate Author:
EMMANUEL COLL BOSTON MASS ORIENTAL SCIENCE RESEARCH LIBRARY
Report Date:
1969-11-01
Abstract:
The relation between the structure of SiC and its growth rate was studied at 2500 degrees C. The setting of the growth condition was improved by limiting the zone of recrystallization in the growth cavity. Super-saturation in the cavity was changed in several steps by the use of the cavity wall and thermo-insulator. Author
Supplementary Note:
Trans. of Yogyo Kyokaishi (Japan) v76 n8 p268-276 1968.
Pages:
0026
Contract Number:
F19628-68-C-0251
File Size:
0.00MB
