With the realization of high frequency transistors having current and power gain-bandwidth products in the gigacycle region, ultra wideband amplifiers are now possible. This report presents an analysis of the basic high frequency transistor configurations along with experimental data obtained from both single and multiple stage amplifiers having bandwidths ranging from 200 to 800 MHz. Included is a discussion of the important parameters that determine transistors high frequency response along with problems associated with layout and component selection. Various techniques for trading gain for bandwidth are treated and experimentally reported. A new approach for designing wideband cascaded amplifiers that require a minimum of adjustments yet yield near optimum performance is given.