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PHONON INTERACTIONS IN CRYSTALS.
THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS N Y
Measurements of parametric up-conversion in TiO2 show a large anisotropy of the third order elastic constants. A theory of signal velocity for both emission and absorption is presented. Attenuation of microwave phonons due to In impurities in Ge were observed to be similar to that caused by Ga impurities. This was expected from a proposed theory of attenuation by acceptors, although the experimental results are not yet completely understood. Measurements were made of the attenuation of x-band phonons in YIG, and Ga substituted YIG, as a function of temperature. Heat pulses were observed in two more carefully grown single crystals of tin, but, as before, the heat flow was principally a diffusive one with a resulting electron mean free path of 0.005 cm. The thermal relaxation time of thin indium films were measured as a continuous function of temperature. For indium on sapphire, this relaxation time seems to be independent of temperature from 4K to 300K. Author
Quarterly progress rept. no. 9, 15 May-14 Aug 65,
See also AD-619-273.