Accession Number:

AD0623570

Title:

THERMOELECTRIC MATERIALS.

Personal Author(s):

Corporate Author:

STANFORD RESEARCH INST MENLO PARK CALIF

Report Date:

1963-03-15

Abstract:

A new cell was developed employing an atmosphere of hydrogen to determine the resistivity of bismuth metal from 300 to 750C. The hydrogen atmosphere prevented the formation of oxide on the metal, and the values obtained agree very well with those reported in the literature for this temperature range. After the determination of the resistivity of liquid bismuth metal had been completed, the atmosphere was changed to helium, dried by passage through silica gel and oxygen removed by copper turnings held at 800C. Bismuth sulfide additions to the liquid bismuth were then made in amounts which increased the atom percent sulfur in steps of 5 percent up to 35 atom percent sulfur. The resistivity was determined over the temperature range from the solidification point of the composition to 750C for each step.

Descriptive Note:

Bi-monthly progress rept. no. 24, 1 Jan-1 Mar 63,

Supplementary Note:

See also AD-622 580.

Pages:

0003

Contract Number:

NObs77017

File Size:

0.00MB

Full text not available:

Request assistance