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Accession Number:
AD0623397
Title:
SEMICONDUCTOR RESEARCH.
Corporate Author:
PURDUE UNIV LAFAYETTE IND DEPT OF PHYSICS
Report Date:
1965-09-30
Abstract:
Contents Electroluminescence Spikes in p-type GaSb Ultrasonic amplification and intrinsic breakdown in InSb Lithium diffusion and heat treatment of tellurium-doped n-GaSb Weak field magnetoresistance in n-type aluminum antimonide Transport measurements at moderate uniaxial and hydrostatic stresses, low temperatures, and large magnetic fields Effect of stress on the resistivity and hall coefficient of aluminum antimonide Effect of stress on the electrical properties of n-type GaAs Effect of pressure on the electrical properties of n-type Silicon containing sulfur Magnetoresistance of hop conduction in Ge Excitation spectra of Group-V donors in silicon Excitation spectra of donors in silicon-germanium alloys Optical absorption of ZnTe Electron paramagnetic resonance in electron irradiated germanium Electron paramagnetic resonance in neutron irradiated silicon Low temperature specific heat of reduced Ti02 Rutile Calorimetric study of vanadium in the superconducting, normal, and mixed states Polaron in a magnetic field.
Descriptive Note:
Semiannual rept. for 1 Apr-30 Sep 65,
Pages:
0055
Contract Number:
DA31 124ARO D17
File Size:
0.00MB
