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Accession Number:
AD0623324
Title:
SEMICONDUCTOR MICROWAVE AMPLITUDE AND PHASE MODULATOR.
Corporate Author:
GENERAL TELEPHONE AND ELECTRONICS LABS INC BAYSIDE N Y
Report Date:
1965-09-14
Abstract:
The drive power required to maintain a constant modulation index as the rf carrier power was varied from 0.22 mW to 2.5 mW was experimentally determined for the PIN amplitude modulator. A linear relation was found to exist between the modulation drive and the rf carrier power levels. Effort to stabilize the varactors for the phase modulator by coating the semiconductor surface with a thin dielectric film was continued. Ciba Araldite 6005 epoxy has been found to be effective in enhancing varactor stability. Experiments to encapsulate the varactor in an inert atmosphere with mylar windows or dielectric plugs were initiated. Theoretical analysis indicates that the voltage-dependent resistance of a properly biased PIN diode can be used to achieve phase modulation consistent with the program requirements. Author
Descriptive Note:
Quarterly rept. no. 9, 16 May-15 Aug 65,
Supplementary Note:
See also AD-619 579.
Pages:
0020
Contract Number:
DA36 039AMC02284E
File Size:
0.00MB
