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SPONTANEOUS BENDING OF THIN (111) CRYSTALS OF III-V COMPOUNDS,
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
Thin 111 wafers of GaAs, InAs, GaSb and InSb, 5 to 25 microns thick, were found to bend spontaneously, the A surface being convex. Such bending is consistent with the elastic strain energy associated with the distortion of the bonding configuration on the A surfaces of the III-V compounds. Exposure of the thin wafers to NH3 resulted in an increase in the radius of curvature whereas exposure to H2S resulted in a decrease in the radius of curvature. These effects are believed to result from preferential adsorption. Author
Pub. in Surface Science (Netherlands) v1 p361-66 1964 (Copies available only to DDC users).