DID YOU KNOW? DTIC has over 3.5 million final reports on DoD funded research, development, test, and evaluation activities available to our registered users. Click
HERE to register or log in.
Accession Number:
AD0610780
Title:
CATALYTIC PROPERTIES OF SEMICONDUCTORS.
Corporate Author:
POLYTECHNIC INST OF BROOKLYN N Y
Report Date:
1963-09-30
Abstract:
A study of the catalytic activity of semiconductor surfaces is reported. The ortho-parahydrogen conversion and hydrogen-deuterium exchange were investigated on the following materials sodium tungsten bronzes, Nax WO3 0.30x0.98, graphite-like ytterbium disilicide, YbSi2, germanium, from p-type, resistivity 0.01 ohm cm to n-type 0.005 ohm cm and gallium arsenide from p-type, 0.003 ohm cm to n-type, ca. 0.001 ohm cm. The first two materials were in the form of crystalline powders while the germanium and gallium arsenide were obtained in the form of single-crystal wafers and the catalytic surface was generated by crushing under clean conditions high vacuum. In this case catalytic activity was measured during the period of crushing at room temperature, and thereafter at temperatures 373-550K and hydrogen pressures 6-100 mm Hg. For germanium the activity was also measured at temperatures up to 700K. Some measurements were also made under ultra-high vacuum conditions. The activity of the sodium tungsten bronzes was measured from 77 to 470K pressure 10-400 mm Hg ytterbium disilicide was measured in the temperature range 50-400K.
Descriptive Note:
Final rept. for 1 Jul 58-30 Sep 63,
Pages:
0085
Contract Number:
Nonr83924
File Size:
0.00MB
