The effects of a mono-energetic, constant-dose-rate electron beam on four transistor types are discussed in this paper. Measurements were taken in the grounded emitter configuration both under ambient conditions and while each specific device was under irradiation. The resulting data is presented in a three-step reductionrepresentation technique which utilizes the variation of gain degradation with ambient forward current gain of the device BETA O in a nuclear environment. The three steps are 1 the graphical or first approximation, 2 the computer analysis, and 3 the third step check the use of pre-irradiated devices in breadboarded circuits. A discussion of the Composite Test System used to obtain the parameter profiles under irradiation is included, along with complete design procedure and calculations in the appendix. The latter part of the paper is concerned with an investigation as to the validity of the accelerated testing concept in particular, and the whole present radiation effects program in general. An alternate type of radiation effects program is suggested. Author
A thesis presented as partial fulfillment of the requirements for successful completion of the Trident Scholars Program.