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INVESTIGATION OF RELIABILITY TESTING AND PREDICTION TECHNIQUES FOR INTEGRATED CIRCUITS.
TEXAS INSTRUMENTS INC DALLAS
The work is divided into two main parts 1 a test and data analysis program designed to produce a method for reliability screening, and 2 a physics of failure program to describe the fundamental mechanisms causing device degradation. The test program is approximately 40 percent complete. The final series of fixed and step stress tests was started. Computer programs for the establishment of screening procedures were refined and finalized. Physics of failure activities in surface studies were directed toward analysis of techniques for production of MOS systems that are electrically and thermally stable. Sodium contamination of oxides was measured by neutron activation analysis, and the stability of MOS capacitor structures was characterized by stress testing. Increases in stability of more than two orders of magnitude are reported. The circuit study portion of the program was completed. Results are reported on topological studies, special measurements, and measurement on high speed power dissipation.
Interim technical rept. no. 2, 20 Oct 65-19 Apr 66,