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RESEARCH AND DEVELOPMENT OF LOCALIZED DEFECTS AND HOT SPOTS IN HIGH VOLTAGE PNPN INVERTER SWITCHES.
GENERAL ELECTRIC CO AUBURN NY SEMICONDUCTOR PRODUCTS DEPT
This report deals with the research and development conducted during the investigation of localized defects and hot spots in high voltage p-n-p-n inverter switches. Precipitation in silicon, poisoning phenomena, gold diffusion irregularities, spiking, and resistivity changes, all of which are related to the problem of developing high-voltage, high-speed switches, are discussed, as well as current construction due to the design of a p-n-p-n structure.
Quarterly progress rept. no. 1, 1 Jun-1 Sep 66.