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MICROWAVE EMISSION FROM BULK SEMICONDUCTORS.
TEXAS UNIV AT AUSTIN LABS FOR ELECTRONICS AND RELATED SCIENCE RESEARCH
Microwave emission is observed from bulk n-type indium antimonide and indium arsenide at 77 K in the presence of applied electric E and magnetic B fields. Both a pulsed emission for a pulsed E, and continuous emission for dc fields are observed for InSb, while a pulsed emission for a pulsed E is observed for InAs. The emission is very broadband in nature and has been observed also for submicrowave frequencies. At X-band, the emission is detected by a superheterodyne microwave receiver. The pulsed emission for InSb is observed for a B as low as 500 gauss with an E of 250 Vcm. The threshold E decreases with increasing B to only 6 Vcm at a B of 8 kG. Continuous emission is observed for magnetic fields as low as 3 kG where the threshold E is 15 Vcm. For InAs, pulsed emission is observed for a B as low as 5 kG where the threshold E is 200 Vcm. The threshold E decreases to 135 Vcm at 8.5 kG. The emission intensity is observed to increase with the magnitudes of the applied fields in both materials. For the continuous emission, sample heating limited the magnitude of the power input, hence constraining the applied fields within certain limits. The output intensity was observed to decrease slightly with frequency as the receiver was tuned across X-band. Samples used measured approximately 0.7x0.7x7.0 mm, and current was applied through indium contacts soldered on the ends. Both InAs and InSb were pulled single crystals. Author