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Accession Number:
AD0488977
Title:
ION IMPLANTATION JUNCTION TECHNIQUES.
Corporate Author:
ION PHYSICS CORP BURLINGTON MA
Report Date:
1966-07-31
Abstract:
The investigations being conducted under this program are based on prior investigations. The program is directed at optimization of the ion implantation method of fabricating solar cells from dendritic silicon for systems applications. During this quarter efforts have been primarily concerned with demonstrating that useful cell configurations can be made which include the dendrites as active material. Cells of this type have been made with efficiencies as high as 9.4 AM0. Preliminary investigations have been conducted on reflecting back cells and an optimized antireflective coating for coverslipped cells has been developed. A small investigation has been conducted on applying integral coverslips by reactive sputtering and some evaluation cells were made with the previously developed high vacuum sputtered coverslips.
Descriptive Note:
Quarterly technical progress rept. no. 2, 1 May-31 Jul 66,
Pages:
0028
Contract Number:
AF 33(615)-3636
File Size:
0.00MB
