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Accession Number:
AD0488342
Title:
APPLICATION OF FIELD-EFFECT TRANSISTORS TO R-F POWER GENERATION.
Corporate Author:
NAVAL POSTGRADUATE SCHOOL MONTEREY CA
Report Date:
1966-05-01
Abstract:
Field effect transistors have several characteristics which are distinct from those of standard bipolar transistors. In this paper a study is made to see if any of these characteristics can be advantageously utilized to generate r-f power. A conventional class-C FET r-f power amplifier is analyzed following a semigraphical method similar to that used for vacuum tubes. Some advantageous characteristics of the device are discussed along with some drawbacks. The applicability of FETs to pulse-excited r-f power generation circuits is investigated and the device limitations in this field of application are discussed. Finally, the combined use of an FET and a conventional bipolar transistor, to overcome the respective limitations, in an efficient r-f power generation circuit is studied. A practical working model of this hybrid circuit was built to illustrate its advantages. Author
Descriptive Note:
Master's thesis,
Pages:
0060
File Size:
0.00MB
