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Accession Number:
AD0442579
Title:
TRANSIENT RADIATION EFFECTS ON HALL DEVICES
Corporate Author:
NEW MEXICO UNIV ALBUQUERQUE
Report Date:
1964-06-01
Abstract:
A review of the basic theory of Hall effect and Hall effect devices as related to transient radiation effects is presented. The theory predicts that any transient effect in the Hall voltage output during gamma irradiation of the device depends on the type of biasing used. There is no change in Hall voltage output for constant voltage bias, but the Hall voltage varies as a function of 1n for constant current bias. The transient radiation effects are small and usually within the noise level for dose rates up to 10 to the 7th power rsec. Some experimental data have been obtained using the AFWL 600-kv flash X ray and WSMR 8-Mev Linac that support the theory. Both thin film and crystal devices were used. The thin film devices appear to have a wider range of frequency response and are more radiation resistant.
Supplementary Note:
DOI: 10.21236/AD0442579
Pages:
0061
Distribution Statement:
Approved for public release; distribution is unlimited.
Contract Number:
AF 29(601)-5976
Contract Number 2:
ARPA ORDER-307-62
File Size:
2.28MB
