HIGH CURRENT AND HIGH VOLTAGE SILICON CONTROLLED RECTIFIERS.
WESTINGHOUSE ELECTRIC CORP WASHINGTON DC
Testing facilities for evaluation of thermal impedance, peak forward drop and 10,000 amperes surge current are described. Transmission electron microscope study on materials under the influence of processing was used to assist process control. Effects of crystal materials on junction characteristics are described. The studies confirm the use of 1.125-inch diameter material as the best choice for the state-of-the-art development. Author