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EXCESS NOISE IN SEMICONDUCTORS.
IIT RESEARCH INST CHICAGO ILL
The random spatial distribution of impurity atoms near a semiconductor p-n junction is examined experimentally by causing the space charge region of the junction to sweep through the distribution under a periodic reverse bias potential. The observed noise current spectrum is in reasonable agreement with the results of an analytical treatment based on a Poisson distribution except that some tendency for clustering of impurity atoms is suggested. Experiments to measure fluctuations in the optical absorption of germanium caused by random free carrier fluctuations associated with 1f noise showed that the effect is observable by increasing the strength of the transmitted infrared beam or by improving the detectivity of the infrared detector. The strength of the infrared beam is determined directly from noise measurements on the detector itself. Author
Annual summary rept. no. 8, 15 Nov 62-14 Nov 63,