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Accession Number:
AD0294771
Title:
RESEARCH AND INVESTIGATION OF MATERIALS FOR LASER APPLICATIONS
Corporate Author:
WATKINS-JOHNSON CO PALO ALTO CALIF
Report Date:
1962-12-31
Abstract:
During the past quarter, techniques have been developed for fabricating germanium arsenideGA diodes. One diode was made from a GA crystal containing neodymium and its electroluminescence characteristics measured at several temperatures. Normal zinc-doped GA luminescence was observed, but no neodymium emission lines were seen. Absorption and fluorescence measurements on the same material also failed to reveal neodymium lines. Rough calculations indicated that the neodymium concentration may have to be considerably higher than could have existed in that material before significant neodymium emission can be seen. Diffusion doping of GA and germanium alloys with neodymium are now being studied. Author
Pages:
0001
Contract Number:
AF33 657 8917
File Size:
0.00MB
