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Accession Number:
AD0294715
Title:
ACTIVE THIN-FILM TECHNIQUES MICROMIN PROGRAM
Corporate Author:
SYLVANIA ELECTRIC PRODUCTS INC WALTHAM MASS
Report Date:
1963-01-14
Abstract:
Research was continued to develop a process for depositing device-quality silicon andor germanium films on polycrystalline insulating substrates by vacuum evaporation of silicon andor germanium, then to form diodes and transistors in these films. The ultra-high vacuum evaporator was installed in the laboratory and a total of 29 silicon depositing runs were made. The results of high magnification optical examination of the silicon films for surface structure are encouraging. Optical studies and Hall Effect measurements were carried out on silicon films produced by pyrolytic deposition, and vacuum deposition. Author
Pages:
0001
Contract Number:
NOBSR87633
File Size:
0.00MB
