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Accession Number:
AD0294120
Title:
THE SPUTTERING OF COMPOUNDS
Corporate Author:
RAYTHEON CO WALTHAM MASS
Report Date:
1962-09-20
Abstract:
Sputtering yield data, atom ejection patterns, and sputtered film composition all support a molecular sputtering mechanism of GaSb. The surface structure models used to explain the atom ejection patterns are discussed. Selective sputtering of Ga was noted. Considerable information was obtained concerning the sputtering of diamond structure materials. Author
Pages:
0001
Contract Number:
AF19 604 8004
File Size:
0.00MB
