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POINT DEFECTS AND DISLOCATIONS IN SILVER CHLORIDE
AIR FORCE OFFICE OF SCIENTIFIC RESEARCH ARLINGTON VA
Three experiments on imperfections in silver chloride crystals are reviewed. a Studies of the strain-aging in impure crystals as a function of time, temperature, and purity establish that the dislocations are pinned by divalent impurities which migrate with an activation energy of 0.46 e.v. b Observations of ionic conductivity during pulsed plasticity indicate that excess silver interstitials are created with an efficiency of .0000007 fractional concentration per unit strain these interstitials have a lifetime of one hundred million jumps. c Measurements of the annealing out of excess electrical conductivity of quenched crystals give the divacancy binding energy to be 0.42 e.v. and the migration energy to be 1.0 e.v. The concentration of Schottky defects at high temperatures is estimated to be approximately 0.1. Author
AF49 638 865