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SEMICONDUCTOR THIN FILMS
LEAR INC GRAND RAPIDS MICH
Research was conducted to study the deposition of GaAs films and to determine their photoconductivity, barrier contact and photovoltaic effects. No definite effect of deposition rate of Ge on epitaxial temperature was observed. The GaAs deposition procedure was modified polycrystalline deposits of GaAs were obtained. No correlation of composition of the source material with crystal perfection was observed. Evaporation rates of various particle sizes of source GaAs were calculated. More precise estimation of film thicknesses less than 5000 angstroms were made by using an estimated index of refraction of 3.3 for Na light in GaAs. It was indicated that the properties of a thin semiconductor film on a dielectric cannot be reliably predicted.
AF33 657 7623