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RESISTORS, FIXED, NON-WIREWOUND (POWER TYPE)
INTERNATIONAL RESISTANCE CO PHILADELPHIA PA
- R F IC LY I CO ROL OR B -GLYC ROP O P -PR R IC C ORRESPON I GLY, NO DIFF R C I I I Y OF B VIOR L FF C COUL B OB RV I CO ROL GLYC ROP O P -PR R IC R UL O STR E HE RAPI D P O P ORYLA ION OF P ILOCYBI BY I C OU VI C I L O PR T C RAL ERVOU Y FF C OF P ILOCYBI IS R O LY F R I R FOR TION O - Y O Y LOGU P ILOCI U OR AD - Div. 8 U TISTENTM Hoffman Electronics Corp., El Monte, Calif. TEMPERATURE INSENSITIVE TRANSISTOR. Quarterly rept. no. 2, 15 Aug-15 Nov 61 by John p nos and Richard Epple. 15 Nov 61, 1v. incl. illus. 15 refs. Contract DA 36-039-sc-87276 Unclassified report No automatic release to Foreign N tionals. DESCRIPTORS Transistors, Temperature, Transition temperature, S nsitivity, Space charges, Theory, Design. Semiconductors, Electronic circuits, Diode , Mathematical analysis, Tests. Res arch was continued on emperature insensitive transistors. The Webster gain equation was extended to include space charge recombination in the emitter transition regio . urface recombination and space charge recombination proved to have determining effects on the gain - temperature behavior. Parallel transistor, diode-transistor, and taper base structures were proposed. Feasibility of offset diffusion was shown. Author