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Accession Number:
AD0271050
Title:
SEMICONDUCTOR RESISTIVE ELEMENT
Corporate Author:
TEXAS INSTRUMENTS INC DALLAS
Report Date:
1962-01-01
Abstract:
Efforts were made to develop a low temperature coefficient of resistance TCR semiconductor resistive element with more stable characteristics and greater reliability than the metal film resistors presently on the market. Several semiconductor materials reduced ttania, silicon carbide, silicon boride, gallium arsenide, etc. were considered as bulk elements and for various reasons were rejected. The elements thought most promising were silicon layer configurations formed either by diffusion or by vapor deposition. Silicon layer elements in the preliminary stages of development exhibited TCRs as low as 350 ppm at resistivities of approximately 0.0X ohm-cm. Load life and TCR data are presented for both the standard network devices and the experimental silicon diffused, epitaxial and polycrystalline elements. Author
Pages:
0001
Contract Number:
NOBSR85406
File Size:
0.00MB
