Accession Number:

AD0265462

Title:

High-Temperature Broad-Band Semiconductors

Personal Author(s):

Corporate Author:

GENERAL DYNAMICS SAN DIEGO CA SAN DIEGO United States

Report Date:

1961-04-10

Abstract:

This report includes RARE EARTH SULFIDES AS HIGH-TEMPERATURE THERMOELECTRIC MATERIALS, by S. W. Kurnick, M. F. Merriam, and R. L. Fitzpatrick. 20 Jan 61, Rept. no. GA-1929 SOME REMARKS ON THE ULTIMATE PERFORMANCE OF RARE EARTH SULFIDES, by P. H. Miller, Jr. 1961. ON THE APPLICATION OF THE SEEBECK EFFECT IN SOLIDS, by J. Appel. 10 Mar 61, Rept. no. GAMD-2091 Fundamental work on Ce-S was continued in the attempt to achieve better understanding of the electrical and thermal transport mechanisms of compounds having the Th3P4 structure. Work was begun on the synthesis and evaluation of related compounds which show promise as high-temperature thermoelectric materials. These are the Th3P4structure rare-earth sulfides of La, Pr and Gd. Theoretical interpretation included analysis of the Seebeck coefficient in polar semiconductors. Emphasis was placed on polaron theory, a transport mechanism which shows promise in application for the selection of better thermoelectric materials.

Descriptive Note:

Technical Report,01 Jan 1961,31 Mar 1961

Supplementary Note:

01 Jan 0001, 01 Jan 0001, Sponsored in part by ARPA Order No. 81-59.

Pages:

0061

Descriptors:

Identifiers:

Communities Of Interest:

Modernization Areas:

Distribution Statement:

Approved For Public Release;

Contract Number:

NOBs-77144

File Size:

1.87MB

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