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Accession Number:
AD0265274
Title:
SINGLE-CRYSTAL TUNGSTEN
Corporate Author:
LIBRARY OF CONGRESS WASHINGTON DC AEROSPACE TECHNOLOGY DIV
Report Date:
1961-10-11
Abstract:
A technique and the apparatus for growing large 1 m long single crystals of W are described. A single-crystal W wire is placed in WCl6 vapor, which partially decomposes into its components above 1000 C. The factors which influence a regular growth are 1 the temperature of the growing wire 2 the WCl6 pressure 3 the pressure of the free Cl and 4 the orientation of the crystal with respect to the wire. Singlecrystal W was much softer and more flexible than W prepared in the usual manner. An x-ray analysis showed that the single-crystal structure was destroyed by working, and with increasing deformation, the properties of the material approach those of ordinary tungsten.
Pages:
0001
File Size:
0.00MB
