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Accession Number:
AD0260767
Title:
HIGH TEMPERATURE SEMICONDUCTOR RESEARCH
Corporate Author:
DAVID SARNOFF RESEARCH CENTER PRINCETON N J
Report Date:
1961-04-30
Abstract:
The high pressure magnetic Czochralski apparatus for the growth of GaP single crystals was put into operati n. The preferred growth planes for GaAs thin films was found to be the 211 and 110. Apparatus was constructed and tested to measure the vapor pressure and vapor species during the iodine transport film growth of GaAs. A summary is presented of the ionization energy levels found to date in GaAs, together with their salient properties and the methods used for their detection. A c mprehensive study was continued on he effects of thermal treatments of GaAs. Graded band gap junctions were formed on GaAs by epitaxially growing GaP on a GaAs substrate in the presence of tin vapor. Permanent degradation of GaAs tunnel diodes was shown to occur only when the diode is operated past the valley voltage, and not when tunneling current alone is present. Author
Pages:
0001
Contract Number:
AF19 604 6152
File Size:
0.00MB
