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Accession Number:
AD0260429
Title:
INDUSTRIAL PREPAREDNESS STUDY ON TRANSISTORS. SILICON VIDEO AMPLIFIER (DEVICE 25)
Corporate Author:
RAYTHEON CO NEWTON MASS
Report Date:
1960-10-06
Abstract:
Research was concerned with the development of a 6 mc. video amplifier device device 25, which was produced on a pilot production line. The developmental phase was successfully completed as well as the manufacture of the required 3,000 units. The design of device 25 consisted of a fused-diffused structure with an annular base ring connection to the base layer. Several of the processing steps were optimized and mechanical aids such as jigs and fixtures were introduced. The conversion from sealed tube to open-tube production of diffused semiconductor material was achieved. The emitter fusion process itself was thoroughly investigated and the choice of argon as a firing ambient, as well as optimized firing temperatures and dot sizes gave a device which met the military objective specifications. Author
Pages:
0001
File Size:
0.00MB
