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Accession Number:
AD0260220
Title:
SEMICONDUCTOR SURFACE PASSIVATION PRODUCTION REFINEMENT PROGRAM
Corporate Author:
MOTOROLA INC PHOENIX ARIZ
Report Date:
1961-06-30
Abstract:
Re earch is concerned with the development of devices approaching the ultimate in reliability and simplicity. Using accelerated oxidation, several thousan A.U. glass films formed in situ at 400 C - 750 C in 12 - 4 hours, at atmospheric pressure passivating and hermetically sealing the PN junctions. Using this accelerated oxidation, surface channeling, ion migration, redistribution of P-N doping impurities are absent. Zener diodes show reverse currents as low as 2 nanoamps at 25 C. Rectifiers aged over 5000 hours with 200 v.d.c. bias applied in a 150 C oven show reverse currents as lo as 13 microamps. Diodes also aged well at high relative humidity, including 100. It was concluded that the PN junctions were passivated by this process and given protection equivalent to a hermetic seal. Improved reliability, performance, yield, and economy can be expected in a wide range of semiconductor devices because of the performance, stability, and design simplification resulting from the use of accelerated oxidation. Author
Descriptive Note:
Quarterly rept. no. 1, 22 Mar-30 Jun 61,
Pages:
0042
Contract Number:
AF 33(600)-42509
File Size:
0.00MB
