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CIRCUIT APPLICATIONS FOR NEGATIVE RESISTANCE SEMICONDUCTOR DEVICES
MASSACHUSETTS INST OF TECH CAMBRIDGE
The PNPN triode and the PNPM thyristor are analyzed, and the observed characteristics of these devices examined in the light of this general analysis. The temperature variation of the V-I characteristic and the capacity of the devices as a function of dc bias are investigated. Negative resistance devices are simulated using transistor pairs of opposite polarity types. The negative resistance semiconductor triodes examined are the RCA germanium thyristor, TA 1832, and the GE high power silicon PNPN triode, ZJ39A. Circuits utilizing the properties of the triode and the thyristor are designed, built, analyzed, and evaluated. These circuits include a free-running pulse generator, a triggered pulse generator, a sawtooth generator, a two thyristor flip-flop, and a one thyristor flip-flop. A discussion of monostable, astable, and bistable operation of circuits is also presented. Author