MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As
WROCLAW UNIV OF TECH (POLAND) FACULTY OF MICROSYSTEM ELECTRONICS AND PHOTONICS
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This work presents the investigation of Metalorganic Vapor Phase Epitaxy MOVPE growth of silicon delta-doped Gallium Arsenide GaAs and Aluminum Gallium Arsenide AlxGa1-xAs epilayers and different methods used for their characterization. The influence of growth temperature, SiH4 flow rate and AlxGa1-xAs composition on delta-doping characteristics is discussed. Properties of the Silicon Si delta-doped structures were examined using capacitance-voltage C-V measurements, photoreflectance spectroscopy, micro-photoluminescence, micro-Raman spectroscopy, and photocurrent spectroscopy. 5 figures, 9 refs.
- Solid State Physics