Accession Number:

ADP013779

Title:

MOVPE Technology and Characterisation of Silicon delta-Doped GaAs and A1(x)Ga(1-x)As

Descriptive Note:

Conference paper

Corporate Author:

WROCLAW UNIV OF TECH (POLAND) FACULTY OF MICROSYSTEM ELECTRONICS AND PHOTONICS

Personal Author(s):

• Sciana, B.
• Radziewicz, D.
• Paszkiewicz, B.
• Tlaczala, M.
• Utko, M.

Report Date:

2002-06-03

Pagination or Media Count:

5.0

Abstract:

This work presents the investigation of Metalorganic Vapor Phase Epitaxy MOVPE growth of silicon delta-doped Gallium Arsenide GaAs and Aluminum Gallium Arsenide AlxGa1-xAs epilayers and different methods used for their characterization. The influence of growth temperature, SiH4 flow rate and AlxGa1-xAs composition on delta-doping characteristics is discussed. Properties of the Silicon Si delta-doped structures were examined using capacitance-voltage C-V measurements, photoreflectance spectroscopy, micro-photoluminescence, micro-Raman spectroscopy, and photocurrent spectroscopy. 5 figures, 9 refs.

Descriptors:

• *GALLIUM ARSENIDES
• *EPITAXIAL GROWTH
• *DOPING
• *SILICON COMPOUNDS
• THERMAL PROPERTIES
• SYMPOSIA
• PHOTOLUMINESCENCE
• RAMAN SPECTROSCOPY
• THIN FILMS
• SUBSTRATES
• SEMICONDUCTING FILMS
• ELECTRON SPECTROSCOPY
• POLAND
• CAPACITANCE
• PHOTOELECTRICITY

Subject Categories:

• Solid State Physics
• Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE