Accession Number:

ADP013778

Title:

Influence of Covering on Critical Thickness of Strained In(x)Ga(1-x)As Layer

Descriptive Note:

Conference paper

Corporate Author:

INSTITUTE OF ELECTRONIC MATERIALS TECHNOLOGY WARSAW (POLAND)

Report Date:

2002-06-03

Pagination or Media Count:

5.0

Abstract:

This study examined the critical layer thickness CLT of mismatched epitaxial layers and strained heterostructures. Samples consisting of InxGa1-xAsInP and In0.52Al0.48AsInxGa1-xAsIn0.52Al0.48AsInP were grown on Indium Phosphorus InP substrates by low pressure metalorganic vapor phase epitaxy LP-MOVPE. Atomic force microscopy AFM was used to observe misfit dislocation generation. When the layer is buried in the heterostructure, its critical layer thickness increases. These investigations have shown how many times this value may be exceeded in chosen technological conditions. A model was proposed that explains the difference between CLT of Indium Gallium Arsenides InGaAs with free surface and CLT of buried InGaAs. Heterostructures mentioned above were employed for producing InAlAsInGaAsInP HEMT transistors. 2 tables, 3 figures, 10 refs.

Subject Categories:

  • Solid State Physics
  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE