Accession Number:

ADP013359

Title:

Correlation of Microwave Dielectric Properties and Microstructure of Unpatterned Ferroelectric Thin Films

Descriptive Note:

Conference proceedings

Corporate Author:

ARMY RESEARCH LAB ABERDEEN PROVING GROUND MD WEAPONS AND MATERIALS RESEARCH DIRECTORATE

Report Date:

2003-04-03

Pagination or Media Count:

6.0

Abstract:

The influence of low concentration 1 mol Mg doping on the structural, microstructural, surface morphological and dielectric properties of Ba1-xSrxTiO3 thin films has been measured and analyzed. The films were fabricated on MgO and Pt-Si substrates via the metalorganic solution deposition technique using carboxylate-alkoxide precursors and post deposition annealed at 800 deg C filmMgO substrates and 750 deg C filmPt-Si substrates. The structure, microstructure, surface morphology and filmsubstrate compositional quality were analyzed and correlated to the films dielectric and insulating properties. Dielectric properties of unpatterned films were measured at 10 GHz with a coupledsplit dielectric resonator system and at 100 kHz using metal-insulator-metal capacitors. The Mg-doped BST films exhibited improved dielectric loss and insulating characteristics compared to the undoped Ba0.6Sr0.4TiO3 thin films. The improved dielectric properties, low leakage current, and good tunability of the low level Mg-doped BST thin films merit strong potential for utilization in microwave tunable devices.

Subject Categories:

  • Physical Chemistry
  • Electricity and Magnetism
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE