Accession Number:

ADP013356

Title:

Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects

Descriptive Note:

Conference proceedings

Corporate Author:

HANYANG UNIV SEOUL (REPUBLIC OF KOREA)DEPT OF ELECTRICAL ENGINEERING

Report Date:

2003-04-03

Pagination or Media Count:

6.0

Abstract:

Polycrystalline ZnO thin films were deposited on SiO2Si100 substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures the 1st deposition for 30 min without oxygen at 100 W and the 2nd deposition with oxygen in the range O2ArO2 10 50 . Deposited ZnO films revealed a strongly c-axis preferred-orientation the corresponding texture coefficient 100 as well as a high resistivity 10 exp 7 Ohm cm. It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Thermodynamics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE