Deposition of Polycrystalline ZnO Films by Two-Step Method and Characterization of Thermal Annealing Effects
HANYANG UNIV SEOUL (REPUBLIC OF KOREA)DEPT OF ELECTRICAL ENGINEERING
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Polycrystalline ZnO thin films were deposited on SiO2Si100 substrate using RF magnetron sputtering. The film deposition performed in this work was composed of following two procedures the 1st deposition for 30 min without oxygen at 100 W and the 2nd deposition with oxygen in the range O2ArO2 10 50 . Deposited ZnO films revealed a strongly c-axis preferred-orientation the corresponding texture coefficient 100 as well as a high resistivity 10 exp 7 Ohm cm. It was also observed that the crystallite size of ZnO was noticeably increased by thermal-annealing.
- Physical Chemistry
- Radiofrequency Wave Propagation