Accession Number:

ADP013354

Title:

Sub 0.1 Micrometer Asymmetric Gamma-Gate PHEMT Process Using Electron Beam Lithography

Descriptive Note:

Conference proceedings

Corporate Author:

DONGGUK UNIV SEOUL (REPUBLIC OF KOREA)MILLIMETER-WAVE INNOVATION TECHNOLOGYRESEARCH CENTER

Personal Author(s):

Report Date:

2003-04-03

Pagination or Media Count:

6.0

Abstract:

In this paper, we have studied on the fabrication of GaAs-based pseudomorphic high electron mobility transistors PHEMTs for the purpose of millimeter-wave applications. To fabricate the high performance GaAs-based PHEMTs, we have developed unit processes, such as 0.1 micrometer GAMMA-gate lithography, silicon nitride passivation, and air-bridge process to achieve high performance of device characteristics. The DC characteristics of the fabricated PHEMT was measured at a unit gate width of 70 micrometers and 2 gate fingers, and showed a good pinch-off property V sub p -1 V and a drain-source saturation current density I sub dss of 373.53 mAmm. Maximum extrinsic transconductance gsub m was 522.4 mSmm at V sub gs -0.3 V, V sub ds 1.5 V, and I sub ds 0.5 I sub dss. The RF measurements were performed in the frequency range of 1.0 50 GHz. For this measurement, the drain and gate voltage were 1.5 V and -0.3 V, respectively. At 50 GHz, 9.2 dB of maximum stable gain MSG and 4.2dB of Ssub 21 gain were obtained, respectively. A current gain cut-off frequency f sub tau of 113 GHz and a maximum frequency of oscillation fmax of 180 GHz were achieved from the fabricated PHEMT with a 0.1 micrometer gate length.

Subject Categories:

  • Physical Chemistry
  • Electricity and Magnetism
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE