Accession Number:

ADP013352

Title:

RF Sputtered BZN Pyrochlore Thin Films for Voltage Tunable Dielectric Device Applications

Descriptive Note:

Conference proceedings

Corporate Author:

SEOUL NATIONAL UNIV (REPUBLIC OF KOREA) SCHOOL OF MATERIALS SCIENCE AND ENGINEERING

Report Date:

2003-04-03

Pagination or Media Count:

6.0

Abstract:

The BZN pyrochlore thin films were prepared on platinized Si substrates using a reactive RF magnetron sputtering. The structures, surface morphologies, dielectric properties and voltage tunable properties of films with deposition parameters were investigated. The BZN thin films have a cubic pyrochlore phase and secondary phases of zinc niobate, bismuth niobate when crystallized at 600 deg C 800 deg C. The dielectric constant and tunability of thin films are O2Ar ratio and post-annealing temperature dependent. The BZN thin films sputtered in 15 O2 and annealed at 700 deg C had a dielectric constant of 153, tan delta of 0.003 and maximum tunability of 14 at 1,000kVcm.

Subject Categories:

  • Physical Chemistry
  • Electricity and Magnetism
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE