Accession Number:

ADP013351

Title:

The Effects of Plasma Induced Damage on the Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching (RIE) and Plasma Ashing Processes

Descriptive Note:

Conference proceedings

Corporate Author:

ELECTRONICS AND TELECOMMUNICATIONS RES INST TAEJON (REPUBLIC OF KOREA) WIRELESS COMM DEPT/BASIC RESEARCH LAB

Report Date:

2003-04-03

Pagination or Media Count:

6.0

Abstract:

The gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the channel layers of ion implanted GaAs MESFETs during reactive ion etching and plasma ashing processes have been investigated. The plasma induced damage was characterized by sheet resistance measurement, X- ray photoelectron spectroscopyXPS and auger electron spectroscopyAES of different etched surfaces, compared with a chemically wet-etched reference surface. Also the effect of the plasma induced damage on the device performance was investigated. As a result, plasma ashing can deteriorate the plasma-induced damage by RIE.

Subject Categories:

  • Physical Chemistry
  • Electricity and Magnetism
  • Plasma Physics and Magnetohydrodynamics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE