Accession Number:
ADP013348
Title:
Characteristics Analysis of SAW Filter Using Al(0.36)Ga(0.64)N Thin Film
Descriptive Note:
Conference proceedings
Corporate Author:
KYUNGPOOK NATIONAL UNIV DAEGU (REPUBLIC OF KOREA) SCHOOL OF ELECTRONIC ENG AND COMPUTER SCIENCE
Personal Author(s):
Report Date:
2003-04-03
Pagination or Media Count:
6.0
Abstract:
AlxGa1-xN sample with x0.36 was epitaxially grown on sapphire by MOCVD. SAW velocity of 5420 ms and TCF temperature coefficient of frequency of -51.20 ppmdeg C were measured from the SAW devices fabricated on the AlxGa1-xN sample, when kh value was 0.078, at temperatures between -30 deg C and 60 deg C. Electro-mechanical coupling coefficient was ranged from 1.26 to 2.22 . The fabricated SAW filter have shown a good device performance with insertion loss of -33.853 dB and side lobe attenuation of 20 dB.
Descriptors:
- *THIN FILMS
- *ACOUSTIC FILTERS
- *SURFACE ACOUSTIC WAVE DEVICES
- *ALUMINUM GALLIUM NITRIDES
- FREQUENCY
- SYMPOSIA
- ELECTROOPTICS
- FABRICATION
- EPITAXIAL GROWTH
- MICROWAVE EQUIPMENT
- SEMICONDUCTOR DEVICES
- SAPPHIRE
- ELECTROMECHANICAL DEVICES
- PIEZOELECTRIC MATERIALS
- ATTENUATION
- KOREA
- TEMPERATURE COEFFICIENTS
- INSERTION LOSS
- ACOUSTIC VELOCITY
- SIDELOBES
Subject Categories:
- Physical Chemistry
- Line, Surface and Bulk Acoustic Wave Devices
- Acoustics
- Electricity and Magnetism