Accession Number:

ADP013347

Title:

Structure-Property Relationships in W Doped (Ba,Sr)TiO(3) Thin Films Deposited by Pulsed Laser Deposition on (001) MgO

Descriptive Note:

Conference proceedings

Corporate Author:

NAVAL RESEARCH LAB WASHINGTON DC

Report Date:

2003-04-03

Pagination or Media Count:

8.0

Abstract:

BaxSr1-xTiO3 films BST with x0.5, 0.6, 0.7, containing 1 W, were grown by pulsed laser deposition on MgO 001 substrates in an oxygen pressure from 3 to 500 mTorr, at a substrate temperature of 720 C. The crystal structure of the film, as determined from x-ray diffraction, was fit to a tetragonal distortion of a cubic lattice having two in-plane lattice parameters. The in and out-of-plane lattice parameters c, a, a, and lattice distortion ac and ac were calculated from the positions of the measured BST reflections 004, 024 and 224. The dielectric properties of the film at 2 GHz were measured using gap capacitors deposited on top of the dielectric film, at room temperature. For all compositions, as a function of the oxygen deposition pressure, a peak in the change in the dielectric constant, as a function of an applied electric field 0 - 80 kVcm, was observed for films deposited in 50 mTorr of oxygen. Unlike the pure BST, the dielectric Q was insensitive to the oxygen deposition pressure. The largest Kappa-factor KAPPAepsilon0-epsilonV x Q0 for films deposited,from Ba0.5Sr0.4TiO3 target were observed in a film that had a minimum in-plane strain, where aa.

Subject Categories:

  • Physical Chemistry
  • Electricity and Magnetism
  • Solid State Physics
  • Radiofrequency Wave Propagation

Distribution Statement:

APPROVED FOR PUBLIC RELEASE