Accession Number:

ADP013307

Title:

The Role of doped Layers in Dephasing of 2D Electrons in Quantum Well Structures

Descriptive Note:

Conference proceedings

Corporate Author:

URAL STATE UNIV SVERDLOVSK (RUSSIA) INST OF PHYSICS AND APPLIED MATHEMATICS

Report Date:

2001-06-01

Pagination or Media Count:

3.0

Abstract:

The temperature and gate voltage dependencies of the phase breaking time is studied experimentally in the structures with quantum well based on GaAsInGaAs. There is shown that arising of the states at the Fermi energy in the doped layers Sn layer in our case leads to significant decreasing of the phase breaking time and to weakness its temperature dependence.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE